BFS360L6 jun-11-2003 1 npn silicon rf transistor preliminary data low voltage/ low current operation for low noise amplifiers for oscillators up to 3.5 ghz and pout > 10 dbm low noise figure: 1.0 db at 1.8 ghz built in 2 transitors ( tr1, tr2: die as bfr360l3) p-tslp-6-1 1 2 3 4 5 6 esd : e lectro s tatic d ischarge sensitive device, observe handling precaution! type marking pin configuration package BFS360L6 fb 1=c1 2=e1 3=c2 4=b2 5=e2 6=b1 tslp-6-1 maximum ratings parameter symbol value unit collector-emitter voltage v ceo 6 v collector-emitter voltage v ces 15 collector-base voltage v cbo 15 emitter-base voltage v ebo 2 collector current i c 35 ma base current i b 4 total power dissipation 1) t s 101c p tot 210 mw junction temperature t j 150 c ambient temperature t a -65 ... 150 storage temperature t st g -65 ... 150 thermal resistance parameter symbol value unit junction - soldering point 2) r thjs 230 k/w 1 t s is measured on the collector lead at the soldering point to the pcb 2 for calculation of r thja please refer to application note thermal resistance
BFS360L6 jun-11-2003 2 electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 1 ma, i b = 0 v (br)ceo 6 9 - v collector-emitter cutoff current v ce = 15 v, v be = 0 i ces - - 10 a collector-base cutoff current v cb = 5 v, i e = 0 i cbo - - 100 na emitter-base cutoff current v eb = 1 v, i c = 0 i ebo - - 1 a dc current gain i c = 15 ma, v ce = 3 v h fe 60 130 200 -
BFS360L6 jun-11-2003 3 electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. ac characteristics (verified by random sampling) transition frequency i c = 15 ma, v ce = 3 v, f = 1 ghz f t - 14 - ghz collector-base capacitance v cb = 5 v, f = 1 mhz, emitter grounded c cb - 0.3 - pf collector emitter capacitance v ce = 5 v, f = 1 mhz, base grounded c ce - 0.15 - emitter-base capacitance v eb = 0.5 v, f = 1 mhz, collector grounded c eb - 0.43 - noise figure i c = 3 ma, v ce = 3 v, z s = z sopt , f = 1,8 ghz i c = 3 ma, v ce = 3 v, z s = z sopt , f = 3 ghz f min - - 1 1.5 - - db power gain, maximum available 1) i c = 15 ma, v ce = 3 v, z s = z sopt , z l = z lopt , f = 1.8 ghz i c = 15 ma, v ce = 3 v, z s = z sopt , z l = z lopt , f = 3 ghz g ma - - 14.5 10 - - transducer gain i c = 15 ma, v ce = 3 v, z s = z l = 50 , f = 1.8 ghz i c = 15 ma, v ce = 3 v, z s = z l = 50 , f = 3 ghz | s 21e | 2 - - 12 8 - - db third order intercept point at output 2) v ce = 3 v, i c = 15 ma, f = 1.8 ghz, z s = z l = 50 ip 3 - 24 - dbm 1db compression point at output i c = 15 ma, v ce = 3 v, z s = z l = 50 , f = 1.8 ghz p -1db - 9 - 1 g ma = | s 21e / s 12e | (k-(k2-1) 1/2 ) 2 ip3 value depends on termination of all intermodulation frequency components. termination used for this measurement is 50 from 0.1 mhz to 6 ghz
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